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| 2SK1934 Silicon N-Channel MOS FET Application High speed power switching Features * * * * Low on-resistance High speed switching No secondary breakdown Suitable for Switching regulator Outline TO-3P D G 1 2 3 1. Gate 2. Drain (Flange) 3. Source S 2SK1934 Absolute Maximum Ratings (Ta = 25C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes 1. PW 10 s, duty cycle 1 % 2. Value at Tc = 25C Symbol VDSS VGSS ID I D(pulse)* I DR Pch* Tch Tstg 2 1 Ratings 1000 30 8 24 8 150 150 -55 to +150 Unit V V A A A W C C 2 2SK1934 Electrical Characteristics (Ta = 25C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Symbol V(BR)DSS V(BR)GSS I GSS Min 1000 30 -- -- 2.0 -- 4 -- -- -- -- -- -- -- -- -- Typ -- -- -- -- -- 1.2 6 2690 920 375 35 135 300 205 0.9 1600 Max -- -- 10 250 3.0 1.6 -- -- -- -- -- -- -- -- -- -- Unit V V A A V S pF pF pF ns ns ns ns V s I F = 8 A, VGS = 0 I F = 8 A, VGS = 0, diF / dt = 100 A / s Test conditions I D = 10 mA, VGS = 0 I G = 100 A, VDS = 0 VGS = 25 V, VDS = 0 VDS = 800 V, VGS = 0 I D = 1 mA, VDS = 10 V ID = 4 A VGS = 10 V*1 ID = 4 A VDS = 20 V*1 VDS = 10 V VGS = 0 f = 1 MHz ID = 4 A VGS = 10 V RL = 7.5 Zero gate voltage drain current I DSS Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time Note 1. Pulse Test VGS(off) RDS(on) |yfs| Ciss Coss Crss t d(on) tr t d(off) tf VDF t rr 3 2SK1934 Power vs. Temperature Derating 150 Channel Dissipation Pch (W) Drain Current I D (A) Maximum Safe Operation Area ar ea ) 50 30 10 3 1 0.3 0.1 10 s s s 0 10 1 m O is pe lim ra ite tion d in by t R his D S( on PW 100 m c= (T 10 n = tio ra pe O DC s (1 sh ot 50 ) ) C 25 Ta = 25C 0 50 100 150 0.05 1 Case Temperature Tc (C) 3 10 30 100 300 1000 Drain to Source Voltage VDS (V) Typical Output Characteristics 10 10 V 8 8V Pulse Test Typical Transfer Characteristics 10 8 Pulse Test VDS = 20 V Drain Current I D (A) 5V 6 4 4V 2 VGS = 3.5 V 0 10 20 30 40 50 Drain to Source Voltage VDS (V) Drain Current I D (A) 6 4 2 Tc = 25C 75C -25C 0 2 4 6 8 10 Gate to Source Voltage VGS (V) 4 2SK1934 Drain to Source Saturation Voltage vs. Gate to Source Voltage Static Drain to Source on State Resistance vs. Drain Current 50 1.0 Drain to Source Saturation Voltage VDS (on) (V) Pulse Test 0.8 0.6 0.4 5A Static Drain to Source on State Resistance R DS(on) ( ) 20 10 5 2 Pulse Test 2A 0.2 ID= 1 A 4 8 12 16 20 Gate to Source Voltage VGS (V) VGS = 10 V 1 0.5 0.2 0.5 1 2 5 Drain Current I D (A) 10 20 0 Static Drain to Source on State Resistance vs. Temperature Forward Transfer Admittance vs. Drain Current 50 5 Static Drain to Source on State Resistance R DS (on) ( ) 4 3 2 1 0 -40 Pulse Test Forward Transfer Admittance |yfs | (S) 20 10 Pulse Test VDS = 20 V Tc = 25C ID = 5 A 2A 1A 5 -25C 2 1 0.2 0.5 1 Drain Current 75C 0 40 80 120 160 Case Temperature TC (C) 0.5 0.1 2 5 I D (A) 10 5 2SK1934 Body to Drain Diode Reverse Recovery Time 5000 Typical Capacitance vs. Drain to Source Voltage 10000 Reverse Recovery Time t rr (ns) 2000 1000 500 200 100 di/dt = 100 A/ s, VGS = 0 Ta = 25C Ciss Capacitance C (pF) 1000 Coss Crss 100 VGS = 0 V f = 1 MHz 50 0.2 0.5 1 2 5 10 20 Reverse Drain Current I DR (A) 10 0 10 20 30 40 50 Drain to Source Voltage VDS (V) Dynamic Input Characteristics 1000 Drain to Source Voltage VDS (V) 800 600 400 200 VDD = 250 V 400 V 600 V VDS ID = 8 A VGS 20 Gate to Source Voltage VGS (V) 16 12 8 4 0 200 Switching Characteristics 500 200 100 50 20 10 5 0.1 VGS = 10 V, VDD = .30 V : PW = 5 s, duty >1% = td(off) tf Switching Time t (ns) tr td(on) VDD = 250 V 400 V 600 V 0 40 80 120 160 Gate Charge Qg (nc) 0.2 0.5 1 Drain Current 2 5 I D (A) 10 6 2SK1934 Reverse Drain Current vs. Source to Drain Voltage 10 I DR (A) Pulse Test 8 6 4 2 Reverse Drain Current VGS = 10 V 0, -5 V 0 0.2 0.4 0.6 Source to Drain Voltage 0.8 1.0 VSD (V) Normalized Transient Thermal Impedance S (t) Normalized Transient Thermal Impedance vs. Pulse Width 3 D=1 0.5 0.3 0.1 0.2 0.1 1.0 TC = 25C 0.05 0.02 ch-c (t) = S (t) * ch-c ch-c = 0.83C/W, TC = 25C PDM D = PW T 0.03 0.01 10 0.01 t Puls ho 1S e T 1m 10 m 100 m Pulse Width PW (s) PW 100 1 10 7 2SK1934 Switching Time Test Circuit Vin Monitor 90% Vout Monitor D.U.T. RL Vin 10 V 50 Vout VDD . = 30 V . td (on) Vin 10% 10% 10% 90% td (off) Waveforms 90% tr tf 8 Unit: mm 5.0 0.3 15.6 0.3 1.0 3.2 0.2 4.8 0.2 1.5 0.5 14.9 0.2 19.9 0.2 1.6 1.4 Max 2.0 2.8 18.0 0.5 1.0 0.2 2.0 0.6 0.2 3.6 0.9 1.0 5.45 0.5 5.45 0.5 Hitachi Code JEDEC EIAJ Weight (reference value) TO-3P -- Conforms 5.0 g 0.3 Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi's or any third party's patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party's rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi's sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi's sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & Integrated Circuits. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109 URL NorthAmerica : http:semiconductor.hitachi.com/ Europe : http://www.hitachi-eu.com/hel/ecg Asia (Singapore) : http://www.has.hitachi.com.sg/grp3/sicd/index.htm Asia (Taiwan) : http://www.hitachi.com.tw/E/Product/SICD_Frame.htm Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm Japan : http://www.hitachi.co.jp/Sicd/indx.htm For further information write to: Hitachi Semiconductor (America) Inc. 179 East Tasman Drive, San Jose,CA 95134 Tel: <1> (408) 433-1990 Fax: <1>(408) 433-0223 Hitachi Europe GmbH Electronic components Group Dornacher Strae 3 D-85622 Feldkirchen, Munich Germany Tel: <49> (89) 9 9180-0 Fax: <49> (89) 9 29 30 00 Hitachi Europe Ltd. Electronic Components Group. Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA, United Kingdom Tel: <44> (1628) 585000 Fax: <44> (1628) 778322 Hitachi Asia Pte. Ltd. 16 Collyer Quay #20-00 Hitachi Tower Singapore 049318 Tel: 535-2100 Fax: 535-1533 Hitachi Asia Ltd. Taipei Branch Office 3F, Hung Kuo Building. No.167, Tun-Hwa North Road, Taipei (105) Tel: <886> (2) 2718-3666 Fax: <886> (2) 2718-8180 Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road, Tsim Sha Tsui, Kowloon, Hong Kong Tel: <852> (2) 735 9218 Fax: <852> (2) 730 0281 Telex: 40815 HITEC HX Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan. |
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